3 0 Ju l 2 00 4 Two Aspects of the Mott - Hubbard Transition in Cr - doped V 2 O 3
نویسنده
چکیده
The combination of bandstructure theory in the local density approximation with dynamical mean field theory was recently successfully applied to V2O3 – a material which undergoes the famous Mott-Hubbard metal-insulator transition upon Cr doping. The aim of this short paper is to emphasize two aspects of our recent results: (i) the filling of the Mott-Hubbard gap with increasing temperature, and (ii) the peculiarities of the Mott-Hubbard transition in this system which is not characterized by a divergence of the effective mass for the a1g-orbital.
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